Product Category:     MOSFET
RoHS:     RoHS Compliant Details
Technology:     Si
Mounting Style:     Through Hole
Package / Case:     TO-251-3
Number of Channels:     1 Channel
Transistor Polarity:     N-Channel
Vds – Drain-Source Breakdown Voltage:     500 V
Id – Continuous Drain Current:     5.6 A
Rds On – Drain-Source Resistance:     1.15 Ohms
Vgs – Gate-Source Voltage:     30 V
Vgs th – Gate-Source Threshold Voltage:     2 V
Qg – Gate Charge:     25 nC
Minimum Operating Temperature:     –
Maximum Operating Temperature:     + 150 C
Packaging:     Reel
Channel Mode:     Enhancement
Configuration:     Single
Fall Time:     45 ns
Pd – Power Dissipation:     90 W
Rise Time:     40 ns
Factory Pack Quantity:     1875
Transistor Type:     1 N-Channel
Typical Turn-Off Delay Time:     90 ns
Typical Turn-On Delay Time:     20 ns
Datasheet