Brand: MAGNACHIP

Type Designator: MDF6N60BTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 37.9 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18.2 nS

Drain-Source Capacitance (Cd): 77 pF

Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm

Package: TO-220F