Brand: Toshiba
Marking Code: K13A65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 2300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO220FP