Specification

Manufacturer:onsemi

Product Category:MOSFET

RoHS: Details

Technology:Si

Mounting Style:Through Hole

Package / Case:TO-220-3

Transistor Polarity:N-Channel

Number of Channels:1 Channel

Vds – Drain-Source Breakdown Voltage:600 V

Id – Continuous Drain Current:7.5 A

Rds On – Drain-Source Resistance:1.2 Ohms

Vgs – Gate-Source Voltage:- 30 V, + 30 V

Vgs th – Gate-Source Threshold Voltage:4 V

Qg – Gate Charge:28 nC

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 150 C

Pd – Power Dissipation:147 W

Channel Mode:Enhancement

Packaging:Tube

Brand:onsemi / Fairchild

Configuration:Single

Fall Time:64.5 ns

Forward Transconductance – Min:8.7 S

Height:16.3 mm

Length:10.67 mm

Product Type:MOSFET

Rise Time:60.5 ns

Series:FQP8N60C

Subcategory:MOSFETs

Transistor Type:1 N-Channel

Type:MOSFET

Typical Turn-Off Delay Time:81 ns

Typical Turn-On Delay Time:16.5 ns

Width:4.7 mm