Brand : Infineon

Marking Code: 80R1K4P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 24 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 6.5 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220FP