Brand : ON Semiconductor
P/N : FCPF190N65F
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Drain Current  |Id| : 20.6 A
Maximum Gate-Source Voltage |Vgs|: ± 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Static Drain-Source On-Resistance(Rds) : 190 mΩ
Ciss : 2350 pF
Qg : 60 nC
Package: TO220FP