Manufacturer:STMicroelectronics
P/N : 50NF25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Drain-Source Voltage |Vds|: 250 V
Gate-Source Voltage |Vgs|: ± 20 V
Gate-Threshold Voltage |Vgs(V)|: 3 V
Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 68.2 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 465 pF
Maximum Drain-Source On-State Resistance (Rds): 0.069 Ohm
Package: TO-220