Product Category : Bipolar Transistors – BJT
Mounting Style : Through Hole
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector-Emitter Saturation Voltage : 600 mV
Maximum DC Collector Current : 2 A
Pd – Power Dissipation : 25 W
Minimum Operating Temperature : – 55 C
Maximum Operating Temperature : + 150 C
Continuous Collector Current : 2 A
DC Collector/Base Gain hfe Min : 40
Height : 11.04 mm
Length : 7.8 mm