Type Designator: 2SB1116
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO-92