Product Category:     MOSFET
RoHS:     No
Technology:     Si
Mounting Style:     Through Hole
Package/Case:     TO-220-3
Number of Channels:     1 Channel
Transistor Polarity:     N-Channel
Vds – Drain-Source Breakdown Voltage:     60 V
Id – Continuous Drain Current:     50 A
Rds On – Drain-Source Resistance:     18 mOhms
Vgs – Gate-Source Voltage:     20 V
Maximum Operating Temperature:     + 175 C
Configuration:     Single
Fall Time:     250 ns
Height:     9.01 mm
Length:     10.41 mm
Minimum Operating Temperature:     – 55 C
Pd – Power Dissipation:     190 W
Rise Time:     250 ns
Series:     IRFZ48
Transistor Type:     1 N-Channel
Typical Turn-Off Delay Time:     210 ns
Typical Turn-On Delay Time:     8.1 ns

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY
VDS (V) 60
RDS(on) (Ω) VGS = 10 V 0.018
Qg (Max.) (nC) 110
Qgs (nC) 29
Qgd (nC) 36
Configuration Single