Type Designator: IPP076N15N5

Marking Code: 076N15N5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.6 V

Maximum Drain Current |Id|: 112 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 49 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0076 Ohm

Package: TO220